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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| MS306 | Infineon Technologies AG | Rectifier Diode, Schottky, 1 Element, 3A, 60V V(RRM), | - | |||||
| MS309 | Infineon Technologies AG | Rectifier Diode, Schottky, 1 Element, 3A, 90V V(RRM), | - | |||||
| AD | FS50KMJ-06F#B00 | Renesas | MOSFET/FET,FS50KMJ - Discrete / Power MOSFET | |||||
| OMS305 | Infineon Technologies AG | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-34 | - | |||||
| 6MS30017E43W40372 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
| 6MS30017E43W38169 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
| OMS305A | Infineon Technologies AG | Power Field-Effect Transistor, 25A I(D), 50V, 0.07ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-34 | - | |||||
| 6MS30017E43W33015 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
| 6MS30017E43W34404 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
| 6MS30017E43W34404NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | ￥262847.1014 | |||||
| 6MS30017E43W33015NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | - | |||||
| 6MS30017E43W38169NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | ￥225836.6232 | |||||
| 6MS30017E43W40372NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, | ￥254002.3685 | |||||
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